Physics of Nanoscale Devices Course | Quantum Tech | IIT Roorkee
Course Details
| Exam Registration | 181 |
|---|---|
| Course Status | Ongoing |
| Course Type | Elective |
| Language | English |
| Duration | 12 weeks |
| Categories | Electrical, Electronics and Communications Engineering, VLSI design |
| Credit Points | 3 |
| Level | Undergraduate/Postgraduate |
| Start Date | 19 Jan 2026 |
| End Date | 10 Apr 2026 |
| Enrollment Ends | 02 Feb 2026 |
| Exam Registration Ends | 20 Feb 2026 |
| Exam Date | 19 Apr 2026 IST |
| NCrF Level | 4.5 — 8.0 |
Unlocking the Quantum World: A Deep Dive into the Physics of Nanoscale Devices
As electronic devices shrink to the atomic scale, the classical laws of physics that guided the semiconductor industry for decades begin to break down. Welcome to the fascinating frontier of nanoelectronics, where quantum mechanics reigns supreme. To navigate this complex landscape, Prof. Vishvendra Singh Poonia from the Indian Institute of Technology Roorkee offers a comprehensive 12-week course designed to equip the next generation of engineers and researchers with the fundamental principles governing nanoscale devices.
Course Overview: Bridging the Gap from Micro to Nano
This course is meticulously structured for senior undergraduate (UG III/IV year) and beginner postgraduate students in Electronics & Communication Engineering and Microelectronics/VLSI. It serves as a crucial bridge, taking learners from the familiar territory of classical electron transport to the quantum realm that defines modern and future devices.
Duration: 12 Weeks
Level: Undergraduate/Postgraduate
Prerequisites: A basic understanding of electrostatics and classical transport theory is beneficial, but the course is designed to build knowledge from the ground up.
Meet the Instructor: Prof. Vishvendra Singh Poonia
Leading this intellectual journey is Dr. Vishvendra Singh Poonia, an Assistant Professor in the Department of Electronics and Communication Engineering at IIT Roorkee. With a strong research focus on quantum technologies—including quantum computing, photocells, and random number generators—Prof. Poonia brings cutting-edge expertise to the classroom. His academic pedigree, featuring a PhD from IIT Bombay, a B.Tech from IIT Roorkee, and postdoctoral research at the prestigious Weizmann Institute of Science in Israel, ensures that the course content is both profound and relevant to global research trends.
Why This Course is Essential
The relentless scaling of transistors has pushed device dimensions into the mesoscopic and nanoscopic regime. Here, phenomena like quantum confinement, ballistic transport, and wave-like electron behavior become dominant. This course addresses the core question: How do we understand and model electronics when devices are so small that quantum mechanics cannot be ignored? It moves beyond traditional models to frameworks like the Landauer formalism, which is essential for describing conduction at the nanoscale.
Detailed 12-Week Course Layout
| Week | Topics Covered |
|---|---|
| Week 1 | Introduction to nanoelectronics, device scaling, and the fundamental shift in physics at the nanoscale. |
| Week 2 | Basics of quantum mechanics: Schrödinger equation, free electrons, and particle in a box. |
| Week 3 | Kronig-Penney model, Brillouin Zones, and the origin of energy bands in solids. |
| Week 4 | Density of states for different dimensions, Fermi function, and modes in a conductor. |
| Week 5 | Conductance, Landauer’s formalism, and the physics of ballistic vs. diffusive transport. |
| Week 6 | MOSFET as a barrier-controlled device and introduction to MOSFET electrostatics. |
| Week 7 | Advanced 2D electrostatics and capacitance in MOSFETs. |
| Week 8 | Modern techniques: High-K dielectrics, Strained Si technology, and quantum confinement effects. |
| Week 9 | Extremely Thin SOI (ETSOI) MOSFETs and transport mechanisms, including ballistic MOSFETs. |
| Week 10 | Ballistic injection velocity and fundamentals of thermoelectric devices. |
| Week 11 | Quantum dot devices: quantum capacitance, I-V characteristics, and self-consistent methods. |
| Week 12 | Introduction to ab initio simulation, the Non-Equilibrium Green’s Function (NEGF) method, and course summary. |
Core Learning Outcomes
By the end of this course, participants will be able to:
- Explain why quantum mechanics is essential for understanding nanoscale devices.
- Apply the Landauer formalism to model ballistic and quasi-ballistic transport.
- Analyze the electrostatics and quantum effects in modern MOSFET architectures.
- Understand the operating principles of advanced devices like quantum dots.
- Gain familiarity with state-of-the-art simulation techniques like NEGF.
Recommended Textbooks & Resources
The course draws from authoritative texts in the field:
- Lessons from Nanoelectronics by Supriyo Datta
- Fundamentals of Nanotransistors by Mark Lundstrom
- Near-Equilibrium Transport: Fundamentals and Applications by Mark Lundstrom
- Introduction to Quantum Mechanics by David J. Griffiths
Industry Relevance and Support
The skills and knowledge imparted in this course are directly applicable in the semiconductor and electronics design industry. The curriculum aligns with the core R&D domains of leading global companies, including:
- Intel (Advanced process technology and device physics)
- Analog Devices (Mixed-signal and precision technology)
- Synopsys (EDA tools and TCAD simulation for nanoscale devices)
This course is more than an academic module; it's a foundational toolkit for anyone aspiring to contribute to the future of electronics, quantum technologies, and advanced VLSI design. Under the expert guidance of Prof. Poonia, students will gain the insights needed to innovate at the very limits of miniaturization.
Enroll Now →